Austenitizing treatment influence on the electrochemical corrosion behavior of 0.3C-14Cr-3Mo martensitic stainless steel

Effects of austenitizing treatment temperatures on aqueous corrosion properties of martensitic stainless steels were investigated by electrochemical tests (potentiodynamic test, potentiostatic test and electrochemical impedance spectroscopy), and surface analyses (optical microscopy and XRD). The results of potentiodynamic test revealed that the breakdown potential increased with the increased austenitizing temperature, indicating increased relative resistance to initiation of localized corrosion. EIS measurements showed that MSS3 (1030 °C) exhibits larger polarization resistance value than MSS1 (970 °C) and MSS2 (1000 °C) at passive and breakdown states. This was caused by decreasing the amount of Cr-rich M₂₃C₆ carbide which acts as preferential sites for pitting corrosion.     

SiCf/SiC陶瓷复合材料的研究进展

SiCf/SiC陶瓷复合材料具有良好的力学性能、高温抗氧化性和化学稳定性，是航空航天和原子能等领域理想的新一代高温结构材料。本文概述了增强体SiCt的发展状况及存在的问题，对SiCt/SiC材料的制备工艺、界面相的研究状态、材料的损伤破坏机理和目前的应用研究进展做了综述，并分析了SiCf/SiC陶瓷复合材料的研究重点和发展前景。     

Surface electronic states in metal-porous silicon-silicon structures

The character of electronic states in porous silicon (PS)-Si, Pd-PS interfaces, and/or PS bulk at the formation of the metal-PS-silicon heterostructure was studied. The energy parameters were estimated using the deep-level transient spectroscopy and capacitance-voltage characteristics at the accounting of the voltage drop distribution along the structure. The analytical expression for voltage drop distribution along dielectric layer, porous layer and space charge region in silicon was obtained by solving the equation for continuity of the electrostatic induction vector. The electronic states studied were shown to manifest the quasi-continuous sub-band in the energy gap if the porous layer was 30-nm thick. Their density increased, as the energy position was being transformed to a deeper energy level of E_v+0.81 eV at the PS layer growing to 90 nm wide.     

纯镁对碳化硼颗粒的常压浸渗

本文研究了纯镁对不同致密度的碳化硼(B₄C)颗粒基片的常压浸渗性;讨论了镁液对B₄C颗粒聚集体常压浸渗的影响因素;提出了浸渗模型。研究表明,纯镁在氩气保护下,800～850℃温度范围保温30min即可浸渗B₄C颗粒聚集体。浸渗深度和宽度随加热温度升高和保温时间延长而增加;常压浸渗的B₄C_P/Mg复合材料具有很高的硬度,B₄C颗粒在基体中分布较均匀。     

The influence of silicon on carbon redistribution in steel weldments

Carbon redistribution was measured in ST1/ST2 Fe-2.5Si-0.8C/Fe-0.32Si-0.49C steel weldments in the temperature range 500–1000 °C. At the temperatures where austenite exists, carbon diffuses from ST1 into ST2; when ferrite is present, the diffusion flow reverses from ST2 into ST1. This effect is attributed to the degree of the silicon influence on the graphite precipitation and carbon activity in ST1 and ST2 steels. The opposite signs of the activity gradients in austenite and ferrite cause the reversal of the carbon diffusion when the annealing temperature is changed from the austenite to the ferrite temperature region. The carbon diffusion coefficients D_C and the thermodynamic interaction coefficients ε_C^Si in austenite have been assessed from the experimental data for ST1 and ST2 steels.     

Evaluation of Slow Crack Growth Resistance in Ceramics for High-Temperature Applications

The slow (subcritical) crack growth (SCG) resistance of Si₃N₄ and SiC ceramics has been evaluated by a stepwise loading test on bending bars precracked by Vickers indentation. Three highly refractory materials were selected for the evaluation: i.e., (1) high-purity Si₃N₄ sintered by hot isostatic pressing (HIP) without additives and (2,3) α - and β - SiC pressureless sintered with B and C addition. Under the hypothesis of linear elastic behavior at high temperature, which was found satisfied in the present materials, the SCG resistance was expressed in terms of initial stress intensity factor critical for SCG failure within a predetermined lifetime. The present method was found useful in shortening the testing time and consistent with other traditional fatigue tests (e.g., static-fatigue test): It is recommended as a screening test for materials under research and development. Among the materials tested in the present study, the highest SCG resistance up to 1440°C was found in the high-purity Si₃N₄ without additives.     

Micromachined silicon bolometers as detectors of soft X-ray, ultraviolet, visible and infrared radiation

This paper presents the development of micromachined thin-film silicon microbolometers which can be used for detection of soft X-ray, UV, visible and infrared radiation. The detector structure is a 1 μm thick polysilicon/Si₃N₄ membrane suspended over a cavity. This structure has been obtained by anisotropic etching of silicon with a previously deposited polysilicon/Si₃N₄ sandwich. Alternatively, porous silicon has been used as the sacrificial layer. Devices have been characterized. Good values of the voltage responsivity and detectivity have been obtained.     

激光法合成SiC超细粉末物理化学过程的研究——Ⅰ.实验规律及粉末特性

用50W连续波CO_2激光器为热源,诱发SiH_4和C_2H_4反应,合成SiC超细粉末。实验确定了反应腔体内压力p、气源中的C/Si原子比、喷嘴内径2r以及激光功率密度与粉末特性之间的关系,并对合成的产物进行物理、化学表征。     

锻热淬火工艺对工具钢碳化物粒度的影响

研究了锻热淬火工艺对Ｔ１０钢和ＧＣｒ１５钢碳化物技度的影响。结果表明，碳化物粒度随变形量的增大而细化；终锻温度在高于碳化物析出的温度范围内变化，其碳化物粒度都同样细小；终锻温度不宜过低，否则将使碳化物变粗。